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1N3700B DG308BAK FDB16AN SA103 D78P4 KA3302D LR682K6 KA3302D
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 60 50 40 Vgs =2.5V
30 Vgs=5V 25 20
Id(A)
Id(A)
30 20 Vgs =2.0V 10 0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristics
15 10
125C
25C 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Vgs(Volts) Figure 2: Transfer Characteristics
12
1.8 Id=13.7A
Normalize ON-Resistance
11 Vgs =4.5V
1.6 Vgs=4.5V 1.4 Vgs=10V 1.2
Rds(on)(m:)
10 9 8 7 6 0 5 10 15 20 25 30 Vgs =10V
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30 25 20 125C Id=13.7A
1E+01 1E+00 1E-01
Rds(on)(m:)
125C
Is(A)
25C
15 10 5 0 0 2 4 6 8 10 Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd(Volts) Figure 6: Body-Diode Characteristics 25C
5 Vds=15V Id=13.7A
10000 Ciss
4
3
Capacitance (pF)
Vgs(Volts)
1000 Coss
2
1 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 5 10 15 20 25 30 Vds(Volts) Figure 8: Capacitance Characteristics
100 Rds(on) limited 10 10ms 1s 1 T j(max) =150C Ta =25C 0.1 0.1 1 10 10s
50 10Ps 100Ps 40
Power (W)
100
1ms 0.1s
Id(A)
30 20 10
DC 0 0.01
0.1
1
10
100
1000
Vds(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=T on/T Tj,pk =Ta+Pdm.ZTja .RTja RTja=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 T on Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T
Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence


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